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SPA-2318Z Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES |
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SPA-2318Z Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES |
1 / 9 page The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 1 Product Description EDS-101432 Rev H Phone: (800) SMI-MMIC http://www.sirenza.com 303 S. Technology Court, Broomfield, CO 80021 Preliminary SPA-2318 SPA-2318Z Pb RoHS Compliant & Package Green 1700-2200 MHz 1 Watt Power Amp with Active Bias Product Features • Now available in Lead Free, RoHS Compliant, & Green Packaging • High Linearity Performance: +21 dBm IS-95 Channel Pwr at -55 dBc ACP +20.7 dBm W-CDMA Channel Pwr at -50dBc ACP +47 dBm Typ. OIP3 • On-chip Active Bias Control • High Gain: 24 dB Typ. at 1960 MHz • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package Applications • W-CDMA Systems • PCS Systems • Multi-Carrier Applications Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 and 2140 MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manu- factured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Symbol Parameters: Test Conditions: Z 0 = 50 Oh ms Temp = 25ºC , V c c = 5 .0V Units Min. Typ. Max. f 0 Frequency of Operation MHz 1700 2200 P 1dB Output Power at 1dB Compression[1] f = 1960 MHz f = 2140 MHz dBm 29.5 29.5 ACP Adjacent Channel Power [1] IS-95 @ P OUT = 21.0 dB m W-C DMA @ P OUT = 20 .7 dB m f = 1960 MHz f = 2140 MHz dBc -55.0 -50.0 -47.0 S 21 Small Signal Gain [1,2] f = 1960 MHz f = 2140 MHz dB 22.5 24.0 23.5 25.0 VSWR Input VSWR [1,2] f = 1960 MHz f = 2140 MHz - - 1.6:1 1.6:1 OIP 3 Output Third Order Intercept Point [2] Power out per tone = +14dBm f = 1960 MHz f = 2140 MHz dBm 46.5 47.0 NF Noise Figure [1,2] f = 1960 MHz f = 2140 MHz dB 5.5 5.5 I CC Device C urrent [1,2] Ibias = 10 mA Ic1 = 70 mA Ic2 = 320 mA mA 360 400 425 V CC Device Voltage [1,2] V 4.75 5.0 5.25 R th j-l Thermal Resistance (junction - lead), T L = 85 ºC ºC/W 31 VC1 VBIAS RFIN VPC2 RFOUT/ VC2 Active Bias [1] Optimal ACP tune [2] Optimal IP3 tune |
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