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BUT11A Datasheet(PDF) 2 Page - STMicroelectronics |
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BUT11A Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.5 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = rated VCES at Tc = 125 oC 1 2 mA mA IEBO Emitter Cut-off Current (IC = 0) IC = 0 VBE = 9 V 10 mA VCEO(sus)* Collector-emitter Sustaining Voltage (IB = 0) IB (off) = 0 IC = 100 mA 450 V VCE(sat)* Collector-emitter Saturation Voltage IC = 2.5 A IB = 0.5 A 1.5 V VBE(sat)* Base-emitter Saturation Voltage IC = 2.5 A IB = 0.5 A 1.3 V hFE DC Current Gain IC = 5 mA VCE = 5 V IC = 0.5 A VCE = 5 V 10 10 35 35 ton ts tf RESISTIVE LOAD Turn on Time Storage Time Fall Time IC = 2.5 A VCC = 250 V IB = -IB2 = 0.5 A 1 4 0.8 µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. BUT11A 2/5 |
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