Part Name
         Description
HN58X25128I

 Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory ( 22 Page)


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HN58X25128I/HN58X25256I
Rev.3.00, Jul.06.2005, page 6 of 20
(Ta =
−40 to +85°C, V
CC = 1.8 V to 5.5 V)
Parameter
Symbol
Alt
Min
Max
Unit
Notes
Clock frequency
fC
fSCK
3
MHz
S active setup time
tSLCH
tCSS1
100
ns
S not active setup time
tSHCH
tCSS2
100
ns
S deselect time
tSHSL
tCS
150
ns
S active hold time
tCHSH
tCSH
100
ns
S not active hold time
tCHSL
100
ns
Clock high time
tCH
tCLH
150
ns
1
Clock low time
tCL
tCLL
150
ns
1
Clock rise time
tCLCH
tRC
1
µs
2
Clock fall time
tCHCL
tFC
1
µs
2
Data in setup time
tDVCH
tDSU
30
ns
Data in hold time
tCHDX
tDH
50
ns
Clock low hold time after
HOLD not active
tHHCH
140
ns
Clock low hold time after
HOLD active
tHLCH
90
ns
Clock high setup time before
HOLD active
tCHHL
120
ns
Clock high setup time before
HOLD not
active
tCHHH
120
ns
Output disable time
tSHQZ
tDIS
200
ns
2
Clock low to output valid
tCLQV
tV
120
ns
Output hold time
tCLQX
tHO
0
ns
Output rise time
tQLQH
tRO
100
ns
2
Output fall time
tQHQL
tFO
100
ns
2
HOLD high to output low-Z
tHHQX
tLZ
100
ns
2
HOLD low to output low-Z
tHLQZ
tHZ
100
ns
2
Write time
tW
tWC
8
ms
Erase / Write Endurance
10
6
cycles
3
Notes: 1. tCH
+ tCL ≥ 1/fC
2. Value guaranteed by characterization, not 100
% tested in production.
3. Value guaranteed by characterization, not 100
% tested in products (Ta = 25°C).
1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22 



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