HN58X25128I datasheet(3/22 Pages) RENESAS | Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory

Part Name

Description

HN58X25128I

Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory ( 22 Page)

RENESAS

3 page

HN58X25128I/HN58X25256I

Rev.3.00, Jul.06.2005, page 3 of 20

Block Diagram

High voltage generator

Memory array

Y-select & Sense amp.

Serial-parallel converter

VCC

VSS

HOLD

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Supply voltage relative to VSS

VCC

−0.6 to + 7.0

Input voltage relative to VSS

VIN

−0.5*

2 to +7.0*3

Operating temperature range*

Topr

−40 to +85

°C

Storage temperature range

Tstg

−65 to +125

°C

Notes: 1. Including electrical characteristics and data retention.

2. VIN (min):

−3.0 V for pulse width ≤ 50 ns.

3. Should not exceed VCC

+ 1.0 V.

DC Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Supply voltage

VCC

1.8



5.5

VSS

Input voltage

VIH

VCC

× 0.7



VCC

+ 0.5*

VIL

−0.3*



VCC

× 0.3

Operating temperature range

Topr

−40



+85

°C

Notes: 1. VIN (min):

−1.0 V for pulse width ≤ 50 ns.

2. VIN (max): VCC + 1.0 V for pulse width

≤ 50 ns.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

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