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IRF4905LPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF4905LPBF
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF4905S/L
2
www.irf.com
Electrical Characteristics @ TJ = 25Β°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
βˆ†V(BR)DSS/βˆ†TJ Breakdown Voltage Temp. Coefficient
––– -0.054 –––
V/Β°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
20
m
Ω
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
19
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
-25
Β΅A
–––
–––
-200
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Qg
Total Gate Charge
–––
120
180
Qgs
Gate-to-Source Charge
–––
32
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
53
–––
td(on)
Turn-On Delay Time
–––
20
–––
tr
Rise Time
–––
99
–––
td(off)
Turn-Off Delay Time
–––
51
–––
ns
tf
Fall Time
–––
64
–––
LS
Internal Source Inductance
–––
7.5
–––
nH
Between lead,
and center of die contact
Ciss
Input Capacitance
–––
3500
–––
Coss
Output Capacitance
–––
1250
–––
Crss
Reverse Transfer Capacitance
–––
450
–––
pF
Coss
Output Capacitance
–––
4620
–––
Coss
Output Capacitance
–––
940
–––
Coss eff.
Effective Output Capacitance
–––
1530
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
-42
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
-280
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
-1.3
V
trr
Reverse Recovery Time
–––
61
92
ns
Qrr
Reverse Recovery Charge
–––
150
220
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = -25V, ID = -42A
ID = -42A
VDS = -44V
Conditions
VGS = -10V
e
VGS = 0V
VDS = -25V
Ζ’ = 1.0MHz
VGS = -20V
VGS = 20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25Β°C, IS = -42A, VGS = 0V e
TJ = 25Β°C, IF = -42A, VDD = -28V
di/dt = -100A/Β΅s
e
Conditions
VGS = 0V, ID = -250Β΅A
Reference to 25Β°C, ID = -1mA
VGS = -10V, ID = -42A
e
VDS = VGS, ID = -250Β΅A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 125Β°C
VGS = 0V, VDS = -1.0V, Ζ’ = 1.0MHz
VGS = 0V, VDS = -44V, Ζ’ = 1.0MHz
VGS = 0V, VDS = 0V to -44V
f
VGS = -10V
e
VDD = -28V
ID = -42A
RG = 2.6 Ω




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