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FMS2016-001-TR Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part # FMS2016-001-TR
Description  High Power Reflective GaAs SP4T Switch
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FMS2016-001-TR Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

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High Power Reflective GaAs SP4T Switch
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v2.4
FMS2016-001
FEATURES:
3x3x0.9mm Packaged pHEMT Switch
High isolation: >30dB at 1.8GHz
Low Insertion loss: 0.65dB at 1.8GHz
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
RoHS Compliant (Directive 2002/95/EC)
GENERAL DESCRIPTION:
The FMS2016-001 is a low loss, high power and
linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset
and other high power switching applications. The
die is fabricated using the Filtronic FL05 0.5
μm
switch process technology, which offers excellent
performance optimised for switch applications.
FUNCTIONAL SCHEMATIC:
ANT
RF1
RF3
RF2
RF4
TYPICAL APPLICATIONS:
Multi-band GSM/DCS/PCS/EDGE handset
modules
High power and linear RF switching
applications
.
ELECTRICAL SPECIFICATIONS:
Parameter
Test Conditions
Min
Typ
Max
Units
Insertion Loss
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.55
0.65
0.75
0.85
dB
dB
Return Loss
0.5 – 2.5 GHz
16
20
dB
Isolation
RF1 – RF2, RF1 – RF3, RF2 – RF4
0.5 – 1.0 GHz
1.0 – 2.0 GHz
30
34
32
dB
dB
Isolation
RF3 – RF4
0.5 – 1.0 GHz
1.0 – 2.0 GHz
26
34
30
dB
dB
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-75
-60
-65
dBc
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-75
-60
-65
dBc
dBc
Switching speed : Trise, Tfall
Ton, Toff
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
<0.3
0.5
μs
μs
Control Current
+35dBm RF input @1GHz
<10
15
μA
IP3
0.9 & 0.91 GHz, Pin = +20 dBm
1.85 & 1.86 GHz, Pin = +20 dBm
>68
>66
dBm
dBm
P0.1dB
1.0GHz
2.0GHz
>38
>37
dBm
dBm
Note:
TAMBIENT = 25°C, Vctrl = 0V/2.7V, ZIN = ZOUT = 50Ω
External DC blocking capacitors are required on all RF ports (typ: 47pF)


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