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HEF4720BT Datasheet(PDF) 3 Page - NXP Semiconductors

Part # HEF4720BT
Description  256-bit, 1-bit per word random access memories
Download  16 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

HEF4720BT Datasheet(HTML) 3 Page - NXP Semiconductors

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January 1995
3
Philips Semiconductors
Product specification
256-bit, 1-bit per word random access memories
HEF4720B
HEF4720V
IDD LIMITS
See below.
FUNCTION TABLE
Notes
1. H = HIGH state (the more positive voltage)
L = LOW state (the less positive voltage)
X = state is immaterial
Z = high impedance OFF-state
CS
W
O
O
MODE
L
H
data written
complement of data
write
into memory
written into memory
L
L
data written
complement of data
read
into memory
written into memory
H
X
Z
Z
inhibit
PINNING
CS
chip select input (active LOW)
W
write enable input
D
data input
A0 to A7
address inputs
O
3-state output (active HIGH)
O
3-state output (active LOW)
SUPPLY VOLTAGE
The values given at VDD = 15 V in the following DC and
AC characteristics, are not applicable to the HEF4720V,
because of its lower supply voltage range.
DC CHARACTERISTICS
VSS =0 V
RATING
RECOMMENDED OPERATING
STAND-BY MIN.
HEF4720B
−0,5 to 18
3,0 to 15,0
3
V
HEF4720V
−0,5 to 18
4,5 to 12,5
3
V
VDD
V
VOL
V
SYMBOL
Tamb (°C)
−40
+25
+85
MIN.
MAX. MIN.
MAX.
MIN.
MAX.
Output current
4,75
0,4
2,4
2
1,6
mA
LOW
10
0,5
IOL
4,8
4
3,2
mA
15
1,5
10,0
10
7,5
mA
Quiescent device
5
25
25
200
µA
current
10
IDD
50
50
400
µA
15
100
100
800
µA
Input leakage current
HEF4720V
10
±I
IN
0,3
0,3
1
µA
HEF4720B
15
0,3
0,3
1
µA


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