 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BAS70-05-7-F Datasheet(PDF) 1 Page - Diodes Incorporated |
|
||||||||||||||||||||||||||||||
BAS70-05-7-F Datasheet(HTML) 1 Page - Diodes Incorporated |
|
|
1 / 3 page  BAS70/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Polarity: See Diagrams Below • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0 ° 8 ° All Dimensions in mm BAS70 Marking: K73, K7C BAS70-04 Marking: K74, K7D BAS70-05 Marking: K75, K7E BAS70-06 Marking: K76, K7F Top View Maximum Ratings @T A = 25°C unless otherwise specified Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 V RMS Reverse Voltage VR(RMS) 49 V Maximum Forward Continuous Current (Note 1) IFM 70 mA Non-Repetitive Peak Forward Surge Current @ t ≤ 1.0s IFSM 100 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance Junction to Ambient Air (Note 1) RθJA 625 °C/W Operating Junction Temperature Range Tj -55 to +125 °C Storage Temperature Range TSTG -65 to +150 °C Electrical Characteristics @T A = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 2) V(BR)R 70 — V IR = 10µA Forward Voltage VF — 410 1000 mV tp <300µs, IF = 1.0mA tp <300µs, IF = 15mA Reverse Current (Note 2) IR ⎯ 100 nA tp <300µs, VR = 50V Total Capacitance CT ⎯ 2.0 pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr — 5.0 ns IF = IR = 10mA to IR = 1.0mA, RL =100Ω Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. DS11007 Rev. 19 - 2 1 of 3 www.diodes.com BAS70/ -04/ -05/ -06 © Diodes Incorporated SPICE MODELS: BAS70 BAS70-04 BAS70-05 BAS70-06 |
Similar Part No. - BAS70-05-7-F |
|
Similar Description - BAS70-05-7-F |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
