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UMZ8N Datasheet(PDF) 2 Page - Rohm |
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UMZ8N Datasheet(HTML) 2 Page - Rohm |
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2 / 3 page  EMZ8 / UMZ8N Transistors Rev.C 2/4 Electrical characteristics (Ta=25 °C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions BVEBO ICBO IEBO VCE(sat) hFE BVCEO −12 −6 − − − 270 − − − − −0.1 − − − −0.1 −0.1 −0.25 680 V V µA µA V − IC = −1mA BVCBO −15 −− V IC = −10µA IE = −10µA VCB = −15V VEB = −6V IC/IB = −200mA/−10mA VCE = −2V , IC = −10mA fT Cob − − 260 6.5 − − MHz pF VCE = −2V , IE = 10mA , f = 100MHz VCB = −10V , IE = 0A , f = 1MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Tr2 Parameter Symbol Min. Typ. Max. Unit Conditions BVEBO ICBO IEBO VCE(sat) hFE BVCEO 50 7 − − − 120 − − − − − − − − 0.1 0.1 0.4 560 V V µA µA V − IC = 1mA BVCBO 60 −− V IC = 50 µA IE = 50 µA VCB = 60V VEB = 7V IC/IB = 50mA/5mA VCE = 6V , IC = 1mA fT Cob − − 180 2 − 3.5 MHz pF VCE = 12V , IE = −2mA , f = 100MHz VCB = 12V , IE = 0A , f = 1MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Electrical characteristic curves <Tr1> 1 2 5 10 20 50 100 200 500 1000 0 0.5 1.0 1.5 BASE TO EMITTER VOLTAGE : VBE (V) VCE =2V Fig.1 Grounded Emitter Propagation Characteristics Ta = −40°C Ta =25°C Ta =125°C 0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Fig.2 Typical Output Characteristics Ta=25 pulsed COLLECTOR TO EMITTER VOLTAGE : VCE (V) I B =700µA I B =600µA I B =500µA I B =400µA I B =300µA I B =200µA I B =100µA I B =0µA °C 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) VCE =2V Fig.3 DC Current Gain vs. Collector Current Ta = −40°C Ta =25°C Ta =125°C 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) IC / IB =20 Ta = −40°C Ta =25°C Ta =125°C Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( Ι) 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Ta =25°C IC / IB =50 IC / IB =20 IC / IB =10 Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( ΙΙ) 10 20 50 100 200 500 1000 2000 5000 10000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) IC / IB =20 Ta =125°C Ta =25°C Ta = −40°C Fig.6 Base-Emitter Saturation Voltage vs.Collecter Current |
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