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IRFZ44NS Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. IRFZ44NS
Description  N-channel enhancement mode TrenchMOS transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 1 page
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Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ44NS
TrenchMOS
TM transistor
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
standard level field-effect power
transistor in a surface mounting
V
DS
Drain-source voltage
55
V
plastic
envelope
using
’trench’I
D
Drain current (DC)
49
A
technology. The device features very
P
tot
Total power dissipation
110
W
low on-state resistance and has
T
j
Junction temperature
175
˚C
integral zener diodes giving ESD
R
DS(ON)
Drain-source on-state
22
m
protection up to 2kV. It is intended for
resistance
V
GS = 10 V
use in switched mode power supplies
and
general
purpose
switching
applications.
PINNING - SOT404 (D
2PAK)
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
55
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-55
V
±V
GS
Gate-source voltage
-
-
20
V
I
D
Drain current (DC)
T
mb = 25 ˚C
-
49
A
I
D
Drain current (DC)
T
mb = 100 ˚C
-
35
A
I
DM
Drain current (pulse peak value)
T
mb = 25 ˚C
-
160
A
P
tot
Total power dissipation
T
mb = 25 ˚C
-
110
W
T
stg, Tj
Storage & operating temperature
-
- 55
175
˚C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model
-
2
kV
voltage, all pins
(100 pF, 1.5 k
Ω)
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
1.4
K/W
mounting base
R
th j-a
Thermal resistance junction to
Minimum footprint, FR4
50
-
K/W
ambient
board
d
g
s
13
mb
2
February 1999
1
Rev 1.000




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