MMBTA05 datasheet(1/3 Pages) DIODES

Part #	MMBTA05

Description	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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MMBTA05 / MMBTA06

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available

(MMBTA55 / MMBTA56)

•

Ideal for Low Power Amplification and Switching

•

Lead Free/RoHS Compliant (Note 3)

•

Qualified to AEC-Q101 Standards for High

Reliability

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

•

MMBTA05 Marking (See Page 3): K1G, K1H

•

MMBTA06 Marking (See Page 3): K1G

•

Ordering & Date Code Information: See Page 3

•

Weight: 0.008 grams (approximate)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

E

B

C

3

12

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

Maximum Ratings @T

A = 25°C unless otherwise specified

Characteristic

Symbol

MMBTA05

MMBTA06

Unit

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

4.0

V

Collector Current - Continuous (Note 1)

IC

500

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @T

A = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

MMBTA05

MMBTA06

V(BR)CBO

60

80

⎯

V

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

MMBTA05

MMBTA06

V(BR)CEO

60

80

⎯

V

IC = 1.0mA, IB = 0

B

Emitter-Base Breakdown Voltage

V(BR)EBO

4.0

⎯

V

IE = 100μA, IC = 0

Collector Cutoff Current

MMBTA05

MMBTA06

ICBO

⎯

100

nA

VCB = 60V, IE = 0

VCB = 80V, IE = 0

Collector Cutoff Current

MMBTA05

MMBTA06

ICES

⎯

100

nA

VCE = 60V, IBO = 0V

VCE = 80V, IBO = 0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

100

⎯

IC = 10mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.25

V

IC = 100mA, IB = 10mA

B

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

1.2

V

IC = 100mA, VCE = 1.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

100

⎯

MHz

VCE = 2.0V, IC = 10mA,

f = 100MHz

Note:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

DS30037 Rev. 10 - 2

1 of 3

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