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IRF540ZPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF540ZPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRF540Z/S/LPbF 2 www.irf.com S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.093 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 21 26.5 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 36 ––– ––– V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 42 63 Qgs Gate-to-Source Charge ––– 9.7 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 15 ––– td(on) Turn-On Delay Time ––– 15 ––– tr Rise Time ––– 51 ––– td(off) Turn-Off Delay Time ––– 43 ––– ns tf Fall Time ––– 39 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 1770 ––– Coss Output Capacitance ––– 180 ––– Crss Reverse Transfer Capacitance ––– 100 ––– pF Coss Output Capacitance ––– 730 ––– Coss Output Capacitance ––– 110 ––– Coss eff. Effective Output Capacitance ––– 170 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 36 (Body Diode) A ISM Pulsed Source Current ––– ––– 140 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 33 50 ns Qrr Reverse Recovery Charge ––– 41 62 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V f VGS = 10V e VDD = 50V ID = 22A RG = 12 Ω TJ = 25°C, IS = 22A, VGS = 0V e TJ = 25°C, IF = 22A, VDD = 50V di/dt = 100A/µs e Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 22A e VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. VDS = 25V, ID = 22A ID = 22A VDS = 80V Conditions VGS = 10V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 20V VGS = -20V |
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