27-March'98

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC45V5964A

5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC45V5964A is an internally impedance matched

GaAs power FET especially designed for use in 5.9 - 6.4

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

FEATURES

Internally matched to 50 ohm system

High output power

P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz

High power gain

GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz

High power added efficiency

P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz

Low Distortion[Item-51]

IM3=-42 dBc(MIN.)@Po=34.5dBm S.C.L.

APPLICATION

5.9 - 6.4 GHz band amplifiers

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

ID = 8 A

Rg=25 ohm

Refer to Bias Procedure

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Ratings

Unit

VGDO

Gate to drain voltage

-15

V

VGSO

Gate to source voltage

-15

V

ID

Drain current

30

A

IGR

Reverse gate current

-60

mA

IGF

Forward gate current

126

mA

PT

Total power dissipation

125

W

Tch

Channel temperature

175

deg.C

Tstg

Storage temperature

-65/+175

deg.C

*1 : Tc=25 Deg.C

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Test conditions

Limits

Unit

Min

Typ

Max

IDSS

Saturated drain current

VDS = 3V , VGS = 0V

-

24

-

A

Gm

Transconductance

VDS = 3V , ID = 8A

-

8

-

S

VGS(off)

Gate to source cut-off voltage

VDS = 3V , ID = 160mA

-

-

-5

V

P1dB

Output power at 1dB gain

compression

44.5

45

-

dBm

GLP

Linear power gain

VDS = 10V , ID = 8A , f = 5.9 - 6.4 GHz

8

9

-

dB

PAE

Power added efficiency

-

33

-

%

IM3

3rd order IM distortion

-42

-45

-

dBc

Rth(ch-c)

Thermal resistance *1

Delta Vf method

-

-

1.0

Deg.C/W

*1 : Channel to case

*2 : Item-51,2tone test,Po=34.5dBm Single Carrier Level,f=6.4GHz, Delta f=10MHz

MITSUBISHI

ELECTRIC

PRELIMINARY

Notice : This is not a final specification.

Some parametric limits are subject to change.

24 +/- 0.3

16.7

20.4 +/- 0.2

OUTLINE DRAWING Unit:millimeters (inches)

GF-38

R1.2

(1)

(1) GATE

(2) SOURCE(FIANGE)

(3) DRAIN

(3)

(2)

0.6 +/- 0.15