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J109 Datasheet(PDF) 2 Page - NXP Semiconductors |
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J109 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 Jul 30 2 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage (<8 Ω for J108). APPLICATIONS • Analog switches • Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING - TO-92 PIN SYMBOL DESCRIPTION 1 g gate 2 s source 3 d drain Fig.1 Simplified outline and symbol. handbook, halfpage 1 3 2 MAM197 s d g QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −±25 V VGSoff gate-source cut-off voltage ID =1 µA; VDS =5V J108 −3 −10 V J109 −2 −6V J110 −0.5 −4V IDSS drain current VGS = 0; VDS =5V J108 80 − mA J109 40 − mA J110 10 − mA Ptot total power dissipation up to Tamb =50 °C − 400 mW |
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