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JA101R Datasheet(PDF) 3 Page - NXP Semiconductors |
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JA101R Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1998 Aug 04 3 Philips Semiconductors Product specification PNP general purpose transistor JA101 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−50 V VCEO collector-emitter voltage open base −−45 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−100 mA ICM peak collector current −−200 mA IBM peak base current −−100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 250 K/W |
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