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Die Characteristics

DIE DIMENSIONS:

179 mils x 107 mils x 19 mils

INTERFACE MATERIALS:

Glassivation:

Type: AlCu

Thickness: 8k

Å

Top Metallization:

Type: Al/Copper

Thickness: 16k

Å

Substrate:

Bipolar DI,

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential:

Tie Substrate to VREF GND

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

200

Metallization Mask Layout

HS-565ARH

VCC

(MSB)

BIT 1

BIT 2

BIT 3

BIT 4

BIT 5

BIT 6

BIT 7

BIT 8

BIT 9

BIT 10

BIT 11

BIT 12

(LSB)

POWER

GND

20V

SPAN

10V

SPAN

IDAC

OUT

BIPOLAR

12

-VS

VREF IN

VREF

GND

VREF OUT

3

NC

3

NC

1

A

HS-565ARH