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JC549C Datasheet(PDF) 4 Page - NXP Semiconductors |
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JC549C Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1997 Jul 08 4 Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 CHARACTERISTICS Tj =25 °C unless otherwise specified. Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V −− 15 nA IE = 0; VCB = 30 V; Tj = 150 °C −− 5 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 100 nA hFE DC current gain IC =10 µA; VCE =5V; see Figs 2 and 3 JC549B; JC550B − 150 − JC549C; JC550C − 270 − hFE DC current gain IC = 2 mA; VCE =5V; see Figs 2 and 3 JC549; JC550 200 − 800 JC549B; JC550B 200 290 450 JC549C; JC550C 420 520 800 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB =5mA − 200 600 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V; note 2 580 660 700 mV IC = 10 mA; VCE = 5 V; note 2 −− 770 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 2.5 − pF Ce emitter capacitance IC =ic = 0; VEB = 500 mV; f = 1 MHz − 11.5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −− MHz F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 10 Hz to 15.7 kHz −− 4dB IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz −− 4dB |
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