Electronic Components Datasheet Search |
|
LCE2009S Datasheet(PDF) 9 Page - NXP Semiconductors |
|
LCE2009S Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 16 page 1997 Mar 03 9 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S; LCE2009S Fig.8 Load power as a function of input power. f = 2 GHz; Tmb =25 °C. VCE = 18 V; IC =30mA. (1) Gpo =11dB. handbook, halfpage 0 typ 10 30 300 0 100 200 20 MGD992 PL (mW) Pi (mW) (1) PL1 Fig.9 s12 as a function of collector current. handbook, halfpage 0 IC (mA) 20 40 80 10 0 60 5 typ MGD993 S12 (dB) Class-A operation. f = 2 GHz; Tmb =25 °C; VCE =18V. LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 |
Similar Part No. - LCE2009S |
|
Similar Description - LCE2009S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |