EtronTech

EM66932A

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)

Preliminary (Rev 0.1 June/2003)

Features

• Clock rate: 133/125/100 MHz

• Fully synchronous operation

• Internal pipelined architecture

• Four internal banks (1M x 32bit x 4bank)

• Programmable Mode

- CAS# Latency: 1, 2 & 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential & Interleave

- Burst-Read-Single-Write

- Driving Strenght : Full & Half

- PASR (Partial Array Self Refresh)

- TCSR (Temperature Compensated Self Refresh)

• Burst stop function

• Individual byte controlled by DQM0-3

• Auto Refresh and Self Refresh

Pin Assignment : Top View

• 4096 refresh cycles/64ms

• Single 3.0V, or 3.3V power supply

• Interface: LVTTL

•Package : 90 ball-FBGA, 11x13mm, Lead Free

Ordering Information

Part Number

Frequency

Package

EM66932ABG-7.5G

133MHz

11x13 BGA

EM66932ABG-8G

125MHz

11x13 BGA

EM66932ABG-1H/LG

100MHz

11x13 BGA

8

7

6

5

4

3

2

1

M

L

K

J

H

G

F

E

D

C

B

A

DQ26

DQ24

DQ28

VDDQ

VSSQ

DQ27

VSSQ

DQ29

VDD

DQ23

VDDQ

VSSQ

DQ22

DQ20

DQ17

VDD1Q

VDDQ

DQ31

VSS

DQM3

A4

A5

A7

A8

DQ18

VSSQ

NC

DQ16

DQM2

VDD

A2

A1

CLK

CKE

DQM1

NC

VDDQ

DQ8

VSSQ

DQ10

A10

A0

NC

A11

CAS#

BA1

DQM0

WE#

VSSQ

DQ7

VSSQ

DQ12

VDDQ

VDDQ

DQ6

DQ5

DQ11

VDDQ

DQ13

DQ15

N

P

R

DQ21

DQ19

VDDQ

BA0

CS#

RAS#

DQ1

DQ3

VDDQ

VDD

VSSQ

DQ4

VDD

DQ0

DQ2

VSS

VSSQ

DQ25

DQ30

NC

A3

A6

NC

A9

NC

VSS

DQ9

DQ14

VSSQ

VSS

9