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EM567169BC-60 Datasheet(PDF) 5 Page - Etron Technology, Inc.

Part # EM567169BC-60
Description  2M x 16 Pseudo SRAM
Download  14 Pages
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Manufacturer  ETRON [Etron Technology, Inc.]
Direct Link  http://www.etron.com
Logo ETRON - Etron Technology, Inc.

EM567169BC-60 Datasheet(HTML) 5 Page - Etron Technology, Inc.

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EtronTech
EM567169BC
5
Rev 0.6
Apr. 2004
DC Characteristics
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
ILI
Input Leakage
Current
VIN = VSS to VCC
-1
1
µA
ILO
Output Leakage
Current
VIO = VSS to VCC
CE1# = VIH, CE2 = VIL or
OE# = VIH or WE# = VIL
-1
1
µA
70ns/85ns
35
ICC1
Operating Current
@ Min Cycle Time
Cycle time = Min., 100% duty,
IIO = 0mA, CE1# = VIL, CE2 =
VIH, VIN = VIH or VIL
60ns/65ns
−
45
mA
ISB1
Standby Current
(CMOS)
CE1# = VCC – 0.2V and
CE2 = VCC – 0.2V,
Other inputs = VSS ~ VCC
−
100
µA
ISBD
Deep Power Down
(0Mb refresh)
CE1#
≤ 0.2V and CE2 ≤ 0.2V, Other inputs =
VSS ~ VCC
−
10
µA
VOL
Output Low
Voltage
IOL = 2.1mA
−
0.4
V
VOH
Output High
Voltage
IOH = -1.0mA
2.4
−
V
Capacitance (Ta = 25
°C; f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input capacitance
CIN
−
−
8
pF
VIN = GND
Output capacitance
COUT
−
−
10
pF
VOUT = GND
Notes: These parameters are sampled and not 100% tested.


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