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EM584161BA-85E Datasheet(PDF) 1 Page - Etron Technology, Inc.

Part # EM584161BA-85E
Description  256K x 16 Low Power SRAM
Download  13 Pages
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Manufacturer  ETRON [Etron Technology, Inc.]
Direct Link  http://www.etron.com
Logo ETRON - Etron Technology, Inc.

EM584161BA-85E Datasheet(HTML) 1 Page - Etron Technology, Inc.

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EtronTech
EM584161
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
256K x 16 Low Power SRAM
Rev 2.0
11/2003
Features
• Single power supply voltage of 1.65V to 1.95V
• Power down features using CE1# and CE2
• Low power dissipation
• Data retention supply voltage: 0.9V to 1.95V
• Direct TTL compatibility for all input and output
• Wide operating temperature range: -40°C to 85°C
• Standby current @ VDD = 1.95 V
ISB
Maximum
EM584161BA/BC-70/85
8
µA
EM584161BA-70E/85E
80
µA
Ordering Information
Part Number
Speed
ISB
Package
EM584161BC-70
70 ns
8
µA
6x8 BGA
EM584161BA-70
70 ns
8
µA
8x10 BGA
EM584161BA-70E
70 ns
80
µA
8x10 BGA
EM584161BC-85
85 ns
8
µA
6x8 BGA
EM584161BA-85
85 ns
8
µA
8x10 BGA
EM584161BA-85E
85 ns
80
µA
8x10 BGA
Overview
Pin Configuration
48-Ball BGA (CSP), Top View
1
2
3
4
5
6
A
B
C
D
E
F
G
H
LB#
OE#
A0
A1
A2
CE2
NC
A8
A9
A10
A11
NC
DQ15
NC
A12
A13
WE#
DQ7
DQ14
DQ13
A14
A15
DQ5
DQ6
VDD
DQ12
NC
A16
DQ4
GN D
DQ8
UB#
A3
A4
CE1#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
GND
DQ11
A17
A7
DQ3
VDD
Pin Description
Symbol
Function
A0 - A17
Address Inputs
DQ0 - DQ15
Data Inputs / Outputs
CE1#, CE2
Chip Enable Inputs
OE#
Output Enable
WE#
Read / Write Control Input
LB#, UB#
Data Byte Control Inputs
GND
Ground
VDD
Power Supply
NC
No Connection
The EM584161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced
CMOS technology.
This Device operates from a single 1.65V to 1.95V power supply. Advanced circuit
technology provides both high speed and low power. It is automatically placed in low-power mode when chip
enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are
used to select the device and for data retention control, and output enable (OE#) provides fast memory access.
Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required. And, with a
guaranteed operating range from -40
°C to 85°C, the EM584161 can be used in environments exhibiting
extreme temperature conditions.


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