TB3500M datasheet(3/4 Pages) DIODES

Part #	TB3500M

Description	50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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DS30361 Rev. 7 - 2

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TB0640M - TB3500M

www.diodes.com

0.9

T , JUNCTION TEMPERATURE (°C)

Fig. 2 Relative Variation of Breakdown Voltage

vs. Junction Temperature

J

V

= (T )

BR

J

V= (T = 25°C)

BR

J

0.95

1

1.05

1.1

1.15

1.2

-50

-25

0

25

50

75

100 125 150 175

1

10

100

1

1.5

3

2.5

2

4

3.5

5

4.5

V , ON-STATE VOLTAGE (V)

Fig. 4 On-State Current vs. On-State Voltage

T

T = 25°C

j

T , JUNCTION TEMPERATURE (°C)

Fig. 1 Off-State Current vs. Junction Temperature

J

0.001

0.01

1

0.1

10

100

-25

0

25

50

75

100

125

150

V= 50V

DRM

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.4

1.3

1.2

-50

-25

0

25

50

100

75

125

T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 Relative Variation of Holding Current vs.

Junction Temperature

I = (T )

HJ

I

= (T = 25°C)

HJ

0.1

1

10

100

V , REVERSE VOLTAGE (V)

Fig. 6 Relative Variation of Junction Capacitance

vs. Reverse Voltage Bias

R

C = (V )

OR

C

= (V = 1V)

OR

T= 25°C

f=1Mhz

V

j

RMS =1V

1

1.05

0.95

-50

1.1

-25

0

75

50

25

125

100

175

150

V

= (T )

BO

J

V= (T = 25°C)

BO

J

T , JUNCTION TEMPERATURE

Fig. 3 Relative Variation of Breakover Voltage

vs. Junction Temperature

J

(ºC)

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