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LLE18300X Datasheet(PDF) 4 Page - NXP Semiconductors |
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LLE18300X Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 1999 Apr 22 4 Philips Semiconductors Product specification NPN microwave power transistor LLE18300X THERMAL CHARACTERISTICS CHARACTERISTICS Tmb =25 °C unless otherwise specified. APPLICATION INFORMATION Microwave performance up to Tmb =25 °C in a common emitter class AB amplifier. SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 100 °C 2 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =20V − 3mA V(BR)CER collector-emitter breakdown voltage IC = 15 mA; RBE = 220 Ω 30 − V V(BR)CBO collector-base breakdown voltage IC =15mA 45 − V V(BR)EBO emitter-base breakdown voltage IE =15mA 3 − V hFE DC current gain IC = 1 A; VCE = 3 V 15 100 MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ηC (%) Zi; ZL ( Ω) Class AB (CW) 1.85 24 0.1 ≥27 typ. 30 ≥7.8 typ. 8.6 typ. 40 see Figs 8 and 9 |
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