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LLE18300X Datasheet(PDF) 4 Page - NXP Semiconductors

Part # LLE18300X
Description  NPN microwave power transistor
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

LLE18300X Datasheet(HTML) 4 Page - NXP Semiconductors

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1999 Apr 22
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tmb =25 °C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C in a common emitter class AB amplifier.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tj = 100 °C
2
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
−
3mA
V(BR)CER
collector-emitter breakdown voltage
IC = 15 mA; RBE = 220 Ω
30
−
V
V(BR)CBO
collector-base breakdown voltage
IC =15mA
45
−
V
V(BR)EBO
emitter-base breakdown voltage
IE =15mA
3
−
V
hFE
DC current gain
IC = 1 A; VCE = 3 V
15
100
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(
Ω)
Class AB (CW) 1.85
24
0.1
≥27
typ. 30
≥7.8
typ. 8.6
typ. 40
see Figs 8
and 9


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