DMP2012SN

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

D

G

S

•

Low On-Resistance

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Lead Free By Design/RoHS Compliant (Note 2)

•

ESD Protected Gate

•

"Green" Device (Note 4)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SC-59

•

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

•

Moisture sensitivity: Level 1 per J-STD-020C

•

Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Marking: See Last Page

•

Ordering & Date Code Information: See Last Page

•

Weight: 0.008 grams (approximate)

SC-59

Dim

Min

Max

A

0.30

0.50

B

1.40

1.80

C

2.50

3.00

D

0.85

1.05

E

0.30

0.70

G

1.70

2.10

H

2.70

3.10

J

⎯

0.10

K

1.00

1.40

L

0.55

0.70

M

0.10

0.35

α

0

°

8

°

All Dimensions in mm

Source

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain

ESD protected

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

Drain Current (Note 1) Steady State

-0.7

A

Pulsed Drain Current (Note 3)

-2.8

A

Total Power Dissipation (Note 1)

500

mW

Thermal Resistance, Junction to Ambient

250

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Notes:

1.

Device mounted on FR-4 PCB.

2.

No purposefully added lead.

3.

Pulse width

≤10μS, Duty Cycle ≤1%.

4.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DS30790 Rev. 2 - 2

1 of 4

www.diodes.com

DMP2012SN

© Diodes Incorporated

SPICE MODEL: DMP2012SN