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LWE2010S Datasheet(PDF) 6 Page - NXP Semiconductors |
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LWE2010S Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page  1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S List of components (see Fig.4) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. L1 3 turns 0.2 mm copper wire with ferrite bead int. dia. 2 mm L2 5 turns 0.5 mm copper wire int. dia. 2 mm C1, C2 feedthrough bypass capacitor Erie, ref. 1214-001 C3, C4 DC block capacitor 100 pF Fig.5 Load power as a function of input power. f = 2.3 GHz; VCE = 18 V; IC = 110 mA (regulated). handbook, halfpage 0 1.2 0.8 0.4 0 0.05 0.1 Pi (W) PL (W) 0.2 MGA251 0.15 |
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