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LM10CH Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM10CH Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 25 page Electrical Characteristics (Continued) T J=25˚C, TMIN ≤T J ≤T MAX (Boldface type refers to limits over temperature range) (Note 5) Parameter Conditions LM10/LM10B LM10C Units Min Typ Max Min Typ Max Line regulation 1.2V (1.3V) ≤V S ≤40V 0.001 0.003 0.001 0.008 %/V 0 ≤I REF ≤1.0 mA, V REF=200 mV 0.006 0.01 %/V Load regulation 0 ≤I REF ≤1.0 mA 0.01 0.1 0.01 0.15 % V +−V REF ≥1.0V (1.1V) 0.15 0.2 % Amplifier gain 0.2V ≤V REF ≤35V 50 75 25 70 V/mV 23 15 V/mV Feedback sense 195 200 205 190 200 210 mV voltage 194 206 189 211 mV Feedback current 20 50 22 75 nA 65 90 nA Reference drift 0.002 0.003 %/˚C Supply current 270 400 300 500 µA 500 570 µA Supply current change 1.2V (1.3V) ≤V S ≤40V 15 75 15 75 µA Electrical Characteristics T J=25˚C, TMIN ≤T J ≤T MAX (Boldface type refers to limits over temperature range) (Note 5) Parameter Conditions LM10BL LM10CL Units Min Typ Max Min Typ Max Input offset voltage 0.3 2.0 0.5 4.0 mV 3.0 5.0 mV Input offset current 0.1 0.7 0.2 2.0 nA (Note 6) 1.5 3.0 nA Input bias current 10 20 12 30 nA 30 40 nA Input resistance 250 500 150 400 k Ω 150 115 k Ω Large signal voltage V S=±3.25V, IOUT=0 60 300 40 300 V/mV gain V OUT=±3.2V 40 25 V/mV V S=±3.25V, IOUT=10 mA 10 25 5 25 V/mV V OUT=±2.75 V 43 V/mV V S=±0.6V (0.65V), IOUT=±2 mA 1.5 3.0 1.0 3.0 V/mV V OUT=±0.4V (±0.3V), VCM=−0.4V 0.5 0.75 V/mV Shunt gain (Note 7) 1.5V ≤V+≤6.5V, R L=500 Ω 8 30 6 30 V/mV 0.1 mA ≤I OUT ≤10 mA 44 V/mV Common-mode −3.25V ≤V CM ≤2.4V (2.25V) 89 102 80 102 dB rejection V S=±3.25V 83 74 dB Supply-voltage −0.2V ≥V−≥−5.4V 86 96 80 96 dB rejection V +=1.0V (1.2V) 80 74 dB 1.0V (1.1V) ≤V+≤6.3V 94 106 80 106 dB V −=0.2V 88 74 dB Offset voltage drift 2.0 5.0 µV/˚C Offset current drift 2.0 5.0 pA/˚C Bias current drift 60 90 pA/˚C Line regulation 1.2V (1.3V) ≤V S ≤6.5V 0.001 0.01 0.001 0.02 %/V 0 ≤I REF ≤0.5 mA, V REF=200 mV 0.02 0.03 %/V www.national.com 3 |
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