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2N3702 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # 2N3702
Description  PNP General Purpose Amplifier
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N3702 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: Pulse
≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T
A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
-25
V
VCBO
Collector-Base Voltage
-40
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
- Continuous
-500
mA
TJ, TST
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
BV(BR)CEO
Collector-Emitter Breakdown Voltage
IC = -10mA, IB = 0
-25
V
BV(BR)CBO
Collector-Base Breakdown Voltage
IC = -100µA, IE = 0
-40
V
BV(BR)EBO
Emitter-Base Breakdown Voltage
IE = -100µA, IC = 0
-5.0
V
ICBO
Collector Cut-off Current
VCB = -20V, IE = 0
-100
nA
IEBO
Emitter Cut-off Current
VEB = -3.0V, IC = 0
-100
nA
On Characteristics *
hFE
DC Current Gain
VCE= -5.0V, IC = -50mA
60
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -50mA, IB = -5.0mA
-0.25
V
VBE(sat)
Base-Emitter Saturation Voltage
VCE= -5.0V, IC = -50mA
-0.6
-1.0
V
Small Signal Characteristics
Cob
Current Gain Bandwidth Product
VCB = -10V, f = 1.0MHz
12
pF
fT
Output Capacitance
IE = -50mA, VCE = -5.0V
100
MHz
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
2N3702
PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 300mA.
• Sourced from Process 68.
• See PN200 for Characteristics.
TO-92
1. Emitter 2. Collector 3. Base
1


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