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2N3704 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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2N3704 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 30 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 50 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 5.0 V ICBO Collector Cut-off Current VCB = 20V, IE = 0 100 nA IEBO Emitter Cut-off Current VEB = 3.0V, IC = 0 100 nA On Characteristics * hFE DC Current Gain VCE= 5.0V, IC = 50mA 100 300 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA, IB = 5.0mA 0.5 1.0 V VBE(on) Collector-Emitter On Voltage VCE= 2.0V, IC = 100mA 0.6 V Small Signal Characteristics Cob Current Gain Bandwidth Product VCB = 10V, f = 1.0MHz 12 pF fT Output Capacitance IC = 50mA, VCE = 2.0V 100 MHz Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1. Emitter 2. Collector 3. Base 1 |
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