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AM29DL322GB40WDFN Datasheet(PDF) 52 Page - SPANSION |
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AM29DL322GB40WDFN Datasheet(HTML) 52 Page - SPANSION |
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52 / 58 page  50 Am29DL32xG 25686B10 December 4, 2006 D A TA SH EET ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90 °C, V CC = 2.7 V (3.0 V for regulated devices), 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 14 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. TSOP PIN AND FINE-PITCH BGA CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions T A = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.4 5 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 28 sec Byte Program Time 5 150 µs Excludes system level overhead (Note 5) Accelerated Byte/Word Program Time 4 120 µs Word Program Time 7 210 µs Chip Program Time (Note 3) Byte Mode 21 63 sec Word Mode 14 42 Description Min Max Input voltage with respect to V SS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V VCC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit C IN Input Capacitance V IN = 0 TSOP 6 7.5 pF Fine-pitch BGA 4.2 5.0 pF C OUT Output Capacitance V OUT = 0 TSOP 8.5 12 pF Fine-pitch BGA 5.4 6.5 pF C IN2 Control Pin Capacitance V IN = 0 TSOP 7.5 9 pF Fine-pitch BGA 3.9 4.7 pF Parameter Description Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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