MPS8098 datasheet(3/8 Pages) PHILIPS

Part #	MPS8098

Description	NPN general purpose transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1997 May 26

3

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

MPS8098

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

60

V

VCEO

collector-emitter voltage

open base

−

60

V

VEBO

emitter-base voltage

open collector

−

6V

IC

collector current (DC)

−

100

mA

ICM

peak collector current

−

200

mA

IBM

peak base current

−

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

500

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

100

nA

IE = 0; VCB = 60 V; Tj = 150 °C

−

10

µA

IEBO

emitter cut-off current

IC = 0; VEB =6V

−

100

nA

hFE

DC current gain

VCE =5V

IC = 1 mA

100

300

IC = 10 mA

100

−

IC = 100 mA

75

−

VCEsat

collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; note 1

−

400

mV

VBE

base-emitter voltage

IC = 1 mA; VCE = 5 V; note 1

500

700

mV

Cc

collector capacitance

IE =ie = 0; VCB =5V; f=1MHz

−

6pF

Ce

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

25

pF

fT

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz;

note 1

100

−

MHz

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