HFA3134_05 datasheet(2/5 Pages) INTERSIL

Part #	HFA3134

Description	Ultra High Frequency Matched Pair Transistors

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Manufacturer	INTERSIL [Intersil Corporation]

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2

FN4445.2

August 12, 2005

Absolute Maximum Ratings

Thermal Information

Collector to Emitter Voltage (RB ≤ 10kΩ to GND) . . . . . . . . . . . .11V

Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V

Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V

Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at TJ =150°C

26mA at TJ =125°C

Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA

ESD Rating

Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V

(Per MIL-STD-883 Method 3015.7)

Operating Conditions

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C

Thermal Resistance (Typical, Note 1)

θJA (°C/W)

SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . .

350

Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C

Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C

Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C

Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300°C

(Soldering 10s, Lead Tips Only)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1.

θJA is measured with the component mounted on an evaluation PC board in free air.

2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current

specification.

Electrical Specifications

TA = 25°C

PARAMETER

SYMBOL

TEST CONDITIONS

(NOTE 3)

TEST

LEVEL

MIN

TYP

MAX

UNITS

DC CHARACTERISTICS FOR HFA3134 (NPN)

Collector to Base Breakdown Voltage

V(BR)CBO IC = 10µA, IE = 0

A

12

21

-

V

Collector to Emitter Breakdown Voltage

V(BR)CEO IC = 100µA, IB = 0

A

4

9

-

V

V(BR)CER IC = 100µA, RB = 10kΩ

A11

17

-

V

Emitter to Base Breakdown Voltage (Note 4)

V(BR)EBO IE = 10µA, IC = 0

B

-

6

-

V

Collector-Cutoff-Current

ICEO

VCE = 6V, IB = 0

A

-5

-

5

nA

Collector-Cutoff-Current

ICBO

VCB = 8V, IE = 0

A

-5

-

5

nA

Emitter-Cutoff-Current (Note 5)

IEBO

VEB = 1V, IC = 0

B

-

1

-

pA

Collector to Collector Leakage

C

-

1

-

nA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = 10mA, IB = 1mA

A

-

95

250

mV

Base to Emitter Voltage (Note 5)

VBE

IC = 10mA, VCE = 2V

A

-

780

1000

mV

Q1 to Q2 Base to Emitter Voltage Match

(Note 5)

∆VBE

IC = 10mA, VCE = 2V

A

-

1.2

6

mV

IC = 1mA, VCE = 2V

A

-

1.0

6

mV

IC = 0.1mA, VCE = 2V

A

-

0.7

6

mV

Base to Emitter Voltage Drift

IC = 10mA

C

-

-1.5

-

mV/°C

DC Forward-Current Transfer Ratio

(Note 5)

hFE

IC = 10mA, VCE = 2V

A

48

80

200

IC = 1mA, VCE = 2V

A

48

87

200

IC = 0.1mA, VCE = 2V

A

48

90

200

IC = 10mA, VCE = 5V

A

48

96

200

IC = 1mA, VCE = 5V

A

48

96

200

IC = 0.1mA, VCE = 5V

A

48

100

200

Q1 to Q2 Current Transfer Ratio Match

∆hFE

1mA

≤ IC ≤ 10mA,

1V

≤ VCE ≤ 5V

A-

2

8

%

Early Voltage

VA

IC = 1mA, ∆VCE = 3V

A

20

30

-

V

HFA3134, HFA3135

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