1997 Feb 19

2

Philips Semiconductors

Product specification

NPN microwave power transistor

MX0912B251Y

FEATURES

• Interdigitated structure; high emitter efficiency

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics

and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance

• Input and output matching cell allows an easier design

of circuits.

APPLICATIONS

Intended for use in common base class C broadband

pulse power amplifier from 960 to 1215 MHz for TACAN

application.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a SOT439A metal ceramic flange package, with base

connected to flange. It is mounted in common base

configuration, and specified in class C.

PINNING - SOT439A

PIN

DESCRIPTION

1

collector

2

emitter

3

base connected to flange

Fig.1 Simplified outline and symbol.

olumns

e

c

b

MAM045

1

2

Top view

3

3

QUICK REFERENCE DATA

MODE OF

OPERATION

f

(GHz)

(V)

(W)

(dB)

(%)

(

Ω)

Class C

0.960 to 1.215

50

>235

>7

>42

see Figs 7 and 8

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.