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MBM29F080A-55PFTN Datasheet(PDF) 3 Page - SPANSION |
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MBM29F080A-55PFTN Datasheet(HTML) 3 Page - SPANSION |
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3 / 44 page  MBM29F080A-55/-70/-90 2 (Continued) This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within 1 second (if already completely preprogrammed). The MBM29F080A is erased when shipped from the factory. The MBM29F080A device also features hardware sector group protection. This feature will disable both program and erase operations in any combination of eight sector groups of memory. A sector group consists of four adjacent sectors grouped in the following pattern: sectors 0-1, 2-3, 4-5, 6-7, 8-9, 10-11, 12-13, and 14-15. Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved. The device features single 5.0 V power supply operation for both read and program functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of DQ7, or by the Toggle Bit I feature on DQ6 or RY/BY output pin. Once the end of a program or erase cycle has been completed, the device automatically resets to the read mode. The MBM29F080A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory. Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29F080A memory electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection. s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) 40-pin TSOP(I) (Package Suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) 44-pin SOP (Package Suffix: PF) • Minimum 100,000 write/erase cycles • High performance 55 ns maximum access time • Sector erase architecture Uniform sectors of 64 K bytes each Any combination of sectors can be erased. Also supports full chip erase. • Embedded Erase™ Algorithms Automatically pre-programs and erases the chip or any sector • Embedded Program™ Algorithms Automatically programs and verifies data at specified address •Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion •Low VCC write inhibit ≤ 3.2 V (Continued) |
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