3

Thermal Information

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5kV

Operating Conditions

Thermal Resistance (Typical, Note 1)

SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

98

(SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1.

θ

details.)

2. All voltages are relative to GND, unless otherwise specified.

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ISET Current Source

18.5

20

21.5

µA

Current Limit Amp Offset Voltage

-6

0

6

mV

Current Limit Time-Out Threshold Voltage

CTIM Voltage

1.3

1.8

2.3

V

GATE Response Time To Severe

Overcurrent

pd_woc_amp

-

100

-

ns

GATE Response Time to Overcurrent

pd_oc_amp

600

ns

GATE Turn-On Current

8.4

10

11.6

µA

GATE Pull down Current

OC_GATE_I_4V

Overcurrent

45

75

mA

GATE Pull down Current

WOC_GATE_I_4V

Severe Overcurrent

0.5

0.8

1.5

A

HIP1015 Undervoltage Threshold

9.2

9.6

10

V

HIP1015 Undervoltage Disabled

V

HIP1015 GATE High Voltage

12VG

GATE Voltage

-

V

HIP1016 Undervoltage Threshold

4.0

4.35

4.5

V

HIP1016 Undervoltage Disabled

V

HIP1016 GATE High Voltage

5VG

GATE Voltage

-V

-3

5

mA

VDD Low to High

7.8

8.4

9

V

VDD High to Low

7.5

8.1

8.7

V

0.1

0.3

0.6

V

PWRON Pull-up Voltage

PWRN_V

PWRON Pin Open

2.7

3.2

-

V

PWRON Rising Threshold

PWR_Vth

1.4

1.7

2.0

V

PWRON Hysteresis

PWR_hys

130

170

250

mV

PWRON Pull-Up Current

PWRN_I

9

17

25

µA

16

20

23

µA

16

20

23

mA

HIP1015 ISEN Current

ISEN_5V_I

41

72

88

µA

HIP1016 ISEN Current

ISEN_5V_I

100

145

170

µA

HIP1015,HIP1016