2

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FN4780.4

January 27, 2006

Die Characteristics

DIE DIMENSIONS

1270

µm x 1778µm (50 mils x 70 mils)

Thickness: 483

µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS

Glassivation

Nitride Thickness: 4.0k

Silox Thickness: 12.0k

Top Metallization

Type: AlSiCu

Thickness: 16.0k

Substrate

EBHF, Dielectric Isolation

Backside Finish

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential

Unbiased (DI)

ADDITIONAL INFORMATION

Worst Case Current Density

Transistor Count

26

Metallization Mask Layout

IS-1009RH

ADJ

V-

V+

IS-1009RH