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CMQ1332-QH-0G0T Datasheet(PDF) 1 Page - Mimix Broadband |
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CMQ1332-QH-0G0T Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 5 page 12.5-14.5 GHz 1.5W QFN Plastic Packaged Power Amplifier Page 1 of 5 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. September 2006 - Rev 17-Sep-06 CMQ1332-QH 32 dBm (Typ) Saturated Output Power 33 dB (Typ) Linear Gain ESD Protection On Die Unconditionally Stable Low Cost, Surfae Mount Package 4x4x1.4 mm RoHS Compliant 7V, 770mA Features Ku-Band VSAT Transmit Subsystems Applications General Description The CMQ1332-QH is a pHEMT power amplifier packaged in a 4X4 QFN plastic package. The CMQ1332-QH is self contained with 50 ohm input and output terminals. The PAM is unconditionally stable and the internal matching allows for a reduction in external components making this product a simple and low cost solution. RoHS compliance and on-chip ESD protection make it an ideal solution in all manufacturing environments. The power amplifier is intended for use as the final RF amplifier in the extended Ku-Band satellite applications. Drain Voltage (+Vdd) Gate Voltage (Vgg) Quiescent Current (Idq) Gate Current (Ig) RF Input Power (Pin) Dissipated Power (Piss) Storage Temperature Operating Backside Temperature +8 V -3 V 1000 mA 5 mA +11 dBm 8 W -50 ºC to +150 ºC -40 ºC to +80 ºC Absolute Maximum Ratings Electrical Characteristics (T = +25ºC,Vd = 7V, Id = 770mA) Operating Frequency (F) Drain Current (At Saturation) (Id) Drain Voltage (Vd) Gate Voltage (RF ON) (Vg) Linear Gain (S21) Input Reflection Coefficient (S11) Output Reflection Coefficient (S22) Noise Figure (NF) Saturated Output Power (Psat) Power @ 1dB Compression Gain (P1dB) Power Added Efficiency (At Saturation) (PAE) Gate Current (Igs) Parameter Units GHz mA Volts Volts dB dB dB dB dBm dBm % mA Min. 12.5 6 -2 31.0 - Typ. 770 7 - 33 -11 -8 9 32 29 27 0.5 Max. 14.5 7.5 -0.2 5 Electrical Specifications (TA = -25C to 80C) Operation outside these limits can cause permanent damage. Saturated Output Power Linear Gain Stability Variation from room temperature Variation from room temperature Parameter Condition dB dB -0.7 -2.5 Units Max Typ Min 2.5 Unconditional Stable |
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