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CMQ1332-QH-0G0T Datasheet(PDF) 1 Page - Mimix Broadband

Part # CMQ1332-QH-0G0T
Description  12.5-14.5 GHz 1.5W QFN Plastic Packaged Power Amplifier
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Manufacturer  MIMIX [Mimix Broadband]
Direct Link  http://www.mimixbroadband.com
Logo MIMIX - Mimix Broadband

CMQ1332-QH-0G0T Datasheet(HTML) 1 Page - Mimix Broadband

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12.5-14.5 GHz
1.5W QFN Plastic Packaged Power Amplifier
Page 1 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
September 2006 - Rev 17-Sep-06
CMQ1332-QH
32 dBm (Typ) Saturated Output Power
33 dB (Typ) Linear Gain
ESD Protection On Die
Unconditionally Stable
Low Cost, Surfae Mount Package
4x4x1.4 mm
RoHS Compliant
7V, 770mA
Features
Ku-Band VSAT Transmit Subsystems
Applications
General Description
The CMQ1332-QH is a pHEMT power amplifier packaged in a 4X4
QFN plastic package. The CMQ1332-QH is self contained with 50
ohm input and output terminals. The PAM is unconditionally
stable and the internal matching allows for a reduction in external
components making this product a simple and low cost solution.
RoHS compliance and on-chip ESD protection make it an ideal
solution in all manufacturing environments. The power amplifier is
intended for use as the final RF amplifier in the extended Ku-Band
satellite applications.
Drain Voltage (+Vdd)
Gate Voltage (Vgg)
Quiescent Current (Idq)
Gate Current (Ig)
RF Input Power (Pin)
Dissipated Power (Piss)
Storage Temperature
Operating Backside Temperature
+8 V
-3 V
1000 mA
5 mA
+11 dBm
8 W
-50 ºC to +150 ºC
-40 ºC to +80 ºC
Absolute Maximum Ratings
Electrical Characteristics (T = +25ºC,Vd = 7V, Id = 770mA)
Operating Frequency (F)
Drain Current (At Saturation) (Id)
Drain Voltage (Vd)
Gate Voltage (RF ON) (Vg)
Linear Gain (S21)
Input Reflection Coefficient (S11)
Output Reflection Coefficient (S22)
Noise Figure (NF)
Saturated Output Power (Psat)
Power @ 1dB Compression Gain (P1dB)
Power Added Efficiency (At Saturation) (PAE)
Gate Current (Igs)
Parameter
Units
GHz
mA
Volts
Volts
dB
dB
dB
dB
dBm
dBm
%
mA
Min.
12.5
6
-2
31.0
-
Typ.
770
7
-
33
-11
-8
9
32
29
27
0.5
Max.
14.5
7.5
-0.2
5
Electrical Specifications (TA = -25C to 80C) Operation outside these limits can cause permanent damage.
Saturated Output Power
Linear Gain
Stability
Variation from room temperature
Variation from room temperature
Parameter
Condition
dB
dB
-0.7
-2.5
Units
Max
Typ
Min
2.5
Unconditional Stable


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