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ISL6610ACBZ Datasheet(PDF) 4 Page - Intersil Corporation |
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ISL6610ACBZ Datasheet(HTML) 4 Page - Intersil Corporation |
4 / 11 page 4 FN6395.0 November 22, 2006 Absolute Maximum Ratings Thermal Information Supply Voltage (PVCC, VCC) . . . . . . . . . . . . . . . . . . . . -0.3V to 7V Input Voltage (VEN, VPWM) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V BOOT Voltage (VBOOT-GND). . . -0.3V to 25V (DC) or 36V (<200ns) BOOT To PHASE Voltage (VBOOT-PHASE) . . . . . . -0.3V to 7V (DC) -0.3V to 9V (<10ns) PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC) GND -8V (<20ns Pulse Width, 10 μJ) to 30V (<100ns) UGATE Voltage . . . . . . . . . . . . . . . . VPHASE - 0.3V (DC) to VBOOT VPHASE - 5V (<20ns Pulse Width, 10μJ) to VBOOT LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V GND - 2.5V (<20ns Pulse Width, 5 μJ) to VCC + 0.3V Ambient Temperature Range . . . . . . . . . . . . . . . . . .-40°C to +125°C HBM ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV Thermal Resistance (Typical) θJA(°C/W) θJC(°C/W) SOIC Package (Note 1) . . . . . . . . . . . . 90 N/A QFN Package (Notes 2 and 3). . . . . . . 46 8.5 Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C Maximum Storage Temperature Range . . . . . . . . . . -65°C to +150°C Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300°C (SOIC - Lead Tips Only) Recommended Operating Conditions Ambient Temperature Range. . . . . . . . . . . . . . . . . . . -40°C to +85°C Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10% CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. +150°C max junction temperature is intended for short periods of time to prevent shortening the lifetime. Constantly operated at 150°C may shorten the life of the part. NOTES: 1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 2. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. 3. θJC, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details. Electrical Specifications These specifications apply for TA = -40°C to +85°C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS SUPPLY CURRENT Bias Supply Current IVCC+PVCC PWM pin floating, VVCC = VPVCC = 5V - 240 - μA FPWM = 300kHz, VVCC = VPVCC = 5V - 1.6 - mA BOOTSTRAP DIODE Forward Voltage VF Forward bias current = 2mA TA = 0°C to +70°C 0.30 0.60 0.70 V Forward bias current = 2mA TA = -40°C to +85°C 0.30 0.60 0.75 V POWER-ON RESET POR Rising -3.4 4.2 V POR Falling 2.6 3.0 - V Hysteresis - 400 - mV PWM INPUT Sinking Impedance RPWM_SNK -4.6 - k Ω Source Impedance RPWM_SRC -4.9 - k Ω Tri-State Rising Threshold VVCC = VPVCC = 5V (250mV Hysteresis) 1.00 1.20 1.40 V Tri-State Falling Threshold VVCC = VPVCC = 5V(300mV Hysteresis) 3.10 3.41 3.70 V Tri-State Shutdown Holdoff Time tTSSHD -80- ns SWITCHING TIME (Note 4, See Figure 1) UGATE Rise Time tRU 3nF Load - 8.0 - ns LGATE Rise Time tRL 3nF Load - 8.0 - ns UGATE Fall Time tFU 3nF Load - 8.0 - ns LGATE Fall Time tFL 3nF Load - 4.0 - ns UGATE Turn-Off Propagation Delay tPDLU Outputs Unloaded - 18 - ns LGATE Turn-Off Propagation Delay tPDLL Outputs Unloaded - 25 - ns ISL6610, ISL6610A |
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