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EL1519 Datasheet(PDF) 7 Page - Intersil Corporation |
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EL1519 Datasheet(HTML) 7 Page - Intersil Corporation |
7 / 9 page 7 FN7017.2 April 10, 2007 Applications Information Product Description The EL1519 is a dual operational amplifier designed for customer premise line driving in DMT ADSL solutions. It is a dual current mode feedback amplifier with low distortion while drawing moderately low supply current. It is built using Elantec's proprietary complimentary bipolar process and is offered in industry standard pin-outs. Due to the current feedback architecture, the EL1519 closed-loop 3dB bandwidth is dependent on the value of the feedback resistor. First the desired bandwidth is selected by choosing the feedback resistor, RF, and then the gain is set by picking the gain resistor, RG. The curves at the beginning of the Typical Performance Curves section show the effect of varying both RF and RG. The 3dB bandwidth is somewhat dependent on the power supply voltage. Power Supply Bypassing and Printed Circuit Board Layout As with any high frequency device, good printed circuit board layout is necessary for optimum performance. Ground plane construction is highly recommended. Lead lengths should be as short as possible, below 1/4”. The power supply pins must be well bypassed to reduce the risk of oscillation. A 1.0µF tantalum capacitor in parallel with a 0.01µF ceramic capacitor is adequate for each supply pin. For good AC performance, parasitic capacitances should be kept to a minimum, especially at the inverting input. This implies keeping the ground plane away from this pin. Carbon resistors are acceptable, while use of wire-wound resistors should not be used because of their parasitic inductance. Similarly, capacitors should be low inductance for best performance. FIGURE 25. DIFFERENTIAL FREQUENCY RESPONSE vs RF FIGURE 26. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE FIGURE 27. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE Typical Performance Curves 100K 1M 10M 100M (Hz) AV=5 VS=±6V RL=100Ω RF=1kΩ RF=750Ω RF=500Ω JEDEC JESD51-3 LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD 1.4 0 0.8 0.4 0.2 0.6 1.2 AMBIENT TEMPERATURE (°C) 0 1 25 50 75 100 150 125 85 781mW θ JA =1 60°C /W SO 8 JEDEC JESD51-7 HIGH EFFECTIVE THERMAL CONDUCTIVITY (4-LAYER) TEST BOARD 3.5 3 0 AMBIENT TEMPERATURE (°C) 0150 50 100 2 2.5 1 1.5 0.5 125 25 75 85 1.136W 110°C/ W SO8 EL1519 |
Similar Part No. - EL1519_07 |
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Similar Description - EL1519_07 |
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