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EL5227CRZ-T13 Datasheet(PDF) 11 Page - Intersil Corporation |
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EL5227CRZ-T13 Datasheet(HTML) 11 Page - Intersil Corporation |
11 / 17 page 11 FN7111.4 May 4, 2007 Applications Information Product Description The EL5127, EL5227, EL5327, and EL5427 unity gain buffers are fabricated using a high voltage CMOS process. It exhibits rail-to-rail input and output capability and has low power consumption (120µA per buffer). These features make the EL5127, EL5227, EL5327, and EL5427 ideal for a wide range of general-purpose applications. When driving a load of 10k Ω and 12pF, the EL5127, EL5227, EL5327, and EL5427 have a -3dB bandwidth of 2.5MHz and exhibits 2.2V/µs slew rate. Operating Voltage, Input, and Output The EL5127, EL5227, EL5327, and EL5427 are specified with a single nominal supply voltage from 5V to 15V or a split supply with its total range from 5V to 15V. Correct operation is guaranteed for a supply range of 4.5V to 16.5V. Most EL5127, EL5227, EL5327, and EL5427 specifications are stable over both the full supply range and operating temperatures of -40°C to +85°C. Parameter variations with operating voltage and/or temperature are shown in the typical performance curves. The output swings of the EL5127, EL5227, EL5327, and EL5427 typically extend to within 80mV of positive and negative supply rails with load currents of 5mA. Decreasing load currents will extend the output voltage range even closer to the supply rails. Figure 22 shows the input and output waveforms for the device. Operation is from ±5V supply with a 10k Ω load connected to GND. The input is a 10VP-P sinusoid. The output voltage is approximately 9.985VP-P. FIGURE 19. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE FIGURE 20. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE FIGURE 21. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE Typical Performance Curves JEDEC JESD51-7 HIGH EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD 1.4 0 AMBIENT TEMPERATURE (°C) 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 85 1.111W 1.333W 1.176W TSSOP28 θJA=75°C/W TSSOP24 θ JA=85°C/W TSSOP20 θ JA=90°C/W 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 255075 125 150 AMBIENT TEMPERATURE (°C) 100 85 714mW 758mW JEDEC JESD51-3 LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD QFN32 θJA=132°C/W 486mW MSOP10 θJA=206°C/W QFN24 θJA=140°C/W JEDEC JESD51-3 LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 255075 100 125 AMBIENT TEMPERATURE (°C) 85 714mW 833mW 781mW TSSOP28 θJA=120°C/W TSSOP24 θJA=128°C/W TSSOP20 θJA=140°C/W EL5127, EL5227, EL5327, EL5427 |
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