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IRG4PC50KPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PC50KPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4PC50KPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 200 300 IC = 30A Qge Gate - Emitter Charge (turn-on) 25 38 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) 85 130 VGE = 15V td(on) Turn-On Delay Time 38 tr Rise Time 34 TJ = 25°C td(off) Turn-Off Delay Time 160 240 IC = 30A, VCC = 480V tf Fall Time 79 120 VGE = 15V, RG = 5.0Ω Eon Turn-On Switching Loss 0.49 Energy losses include "tail" Eoff Turn-Off Switching Loss 0.68 mJ See Fig. 9,10,14 Ets Total Switching Loss 1.12 1.4 tsc Short Circuit Withstand Time 10 µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V td(on) Turn-On Delay Time 37 TJ = 150°C, tr Rise Time 35 IC = 30A, VCC = 480V td(off) Turn-Off Delay Time 260 VGE = 15V, RG = 5.0Ω tf Fall Time 170 Energy losses include "tail" Ets Total Switching Loss 2.34 mJ See Fig. 11,14 LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 3200 VGE = 0V Coes Output Capacitance 370 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 95 = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ TemperatureCoeff.ofBreakdownVoltage 0.47 V/°C VGE = 0V, IC = 1.0mA 1.84 2.2 IC = 30A VGE = 15V VCE(ON) Collector-to-EmitterSaturationVoltage 2.19 IC = 52A See Fig.2, 5 1.79 IC = 30A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ TemperatureCoeff.ofThresholdVoltage -12 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
17 24 S VCE = 100 V, IC = 30A 250 VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω |
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