US5U3_1 datasheet(2/4 Pages) ROHM

Part #	US5U3

Description	2.5V Drive NchSBD MOSFET

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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US5U3

Transistors

Rev.A

2/3

∗1

Parameter

Symbol

W / TOTAL

PD

°C

Tstg

Limits

Unit

Total power dissipation

Range of storage temperature

∗1 Mounted on a ceramic board

−55 to +150

1.0

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

IGSS

Yfs

Min.

−

Typ.

Max.

Unit

Conditions

V(BR) DSS

IDSS

VGS (th)

RDS (on)

Ciss

Coss

Crss

td (on)

tr

td (off)

tf

Qg

Qgs

Qgd

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−

10

µAVGS=12V, VDS=0V

VDD

15V, VGS= 4.5V

30

−−

VID= 1mA, VGS=0V

−−

1

µAVDS= 30V, VGS=0V

0.5

−

1.5

V

VDS= 10V, ID= 1mA

−

170

240

ID= 1.5A, VGS= 4.5V

−

180

250

m

Ω

m

Ω

m

Ω

ID= 1.5A, VGS= 4V

−

240

340

ID= 1.5A, VGS= 2.5V

1.5

−−

SVDS= 10V, ID= 1.5A

−

80

−

pF

VDS= 10V

−

14

12

−

pF

VGS=0V

−

7

−

pF

f=1MHz

−

9

−

ns

−

15

−

ns

−

6

−

ns

−

1.6

−

ns

−

0.5

2.2

nC

−

0.3

−

nC

ID= 1.5A

−−

nC

RL= 10

Ω, RG= 10Ω

VDD

15

V

ID= 0.75A

VGS= 4.5V

RL= 20

Ω

RG=10

Ω

VSD

−−

1.2

V

IS= 0.6A, VGS=0V

Forward voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

VF

−−

0.49

V

IF= 0.7A

Forward voltage

IR

−−

200

µA

VR= 20V

Reverse current

<Di>

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

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