©2006 Fairchild Semiconductor Corporation

FDFMA2P853 Rev. D (W)

1

FDFMA2P853

General Description

Features

This device is designed specifically as a single package

solution for the battery charge switch in cellular handset

and other ultra-portable applications. It features a MOSFET

with low on-state resistance and an independently

connected low forward voltage schottky diode for minimum

conduction losses.

The MicroFET 2x2 package offers exceptional thermal

performance for it's physical size and is well suited to linear

mode applications.

MOSFET:

Schottky:

Low Profile - 0.8 mm maximun - in the new package

MicroFET 2x2 mm

RoHS Compliant

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

MOSFET Drain-Source Voltage

-20

V

MOSFET Gate-Source Voltage

8V

Drain Current -Continuous

(Note 1a)

-Pulsed

-2.2

A

-6

Schottky Repetitive Peak Reverse voltage

30V

Schottky Average Forward Current

(Note 1a)

1

A

Power dissipation for Single Operation

(Note 1a)

Power dissipation for Single Operation

(Note 1b)

1.4

W

0.7

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Resistance, Junction-to-Ambient

(Note 1a)

86

Thermal Resistance, Junction-to-Ambient

(Note 1b)

173

Thermal Resistance, Junction-to-Ambient

(Note 1c)

86

Thermal Resistance, Junction-to-Ambient

(Note 1d)

140

Device Marking

Device

Reel Size

Tape Width

Quantity

.853

FDFMA2P853

7inch

8mm

3000 units

5

1

6

2

3

4

MicroFET

C

A

G

NC D

S

PIN

C

G

S

A

NC

D

C

D

July

2006