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FDFMA2P853 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDFMA2P853 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page ©2006 Fairchild Semiconductor Corporation FDFMA2P853 Rev. D (W) 1 FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. MOSFET: -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V RDS(ON) = 160 m @ VGS = -2.5 V RDS(ON) = 240 m @ VGS = -1.8 V Schottky: VF < 0.46 V @ 500 mA Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm RoHS Compliant Absolute Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS MOSFET Drain-Source Voltage -20 V VGSS MOSFET Gate-Source Voltage 8V ID Drain Current -Continuous (Note 1a) -Pulsed -2.2 A -6 VRRM Schottky Repetitive Peak Reverse voltage 30V IO Schottky Average Forward Current (Note 1a) 1 A PD Power dissipation for Single Operation (Note 1a) Power dissipation for Single Operation (Note 1b) 1.4 W 0.7 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 oC R JA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 oC/W R JA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 R JA Thermal Resistance, Junction-to-Ambient (Note 1c) 86 R JA Thermal Resistance, Junction-to-Ambient (Note 1d) 140 Device Marking Device Reel Size Tape Width Quantity .853 FDFMA2P853 7inch 8mm 3000 units 5 1 6 2 3 4 MicroFET C A G NC D S PIN C G S A NC D C D July 2006 |
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