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FDMA420NZ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDMA420NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  FDMA420NZ Rev B1 www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V , ID = 250µA 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C 12 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V, 1 µA IGSS Gate-Body Leakage VGS = ±12V, VDS = 0V ±10 µA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 0.6 0.83 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -3.1 mV/°C RDS(ON) Static Drain-Source On-Resistance VGS = 4.5V, ID = 5.7A 16.8 30 m Ω VGS = 4.0V, ID = 5.7A 17.3 31 VGS = 3.1V, ID = 5.0A 18.9 33 VGS = 2.5V, ID = 5.0A 21.2 40 VGS = 4.5V, ID = 5.7A, TJ =150°C 24.8 44 gFS Forward Transconductance VDS = 5V, ID = 5.7A 28.3 S (Note 2) Dynamic Characteristics Ciss Input Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz 701 935 pF Coss Output Capacitance 163 220 pF Crss Reverse Transfer Capacitance 125 190 pF RG Gate Resistance f = 1.0MHz 1.92 Ω Switching Characteristics (Note 2) td(on) Turn-On Delay Time VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6Ω 9.8 20 ns tr Turn-On Rise Time 8.6 18 ns td(off) Turn-Off Delay Time 21.5 43 ns tf Turn-Off Fall Time 8.6 18 ns Qg Total Gate Charge VDS = 10V, ID = 5.7A, VGS = 4.5V 8.8 12 nC Qgs Gate-Source Charge 0.9 2 nC Qgd Gate-Drain Charge 2.4 4 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 2.0 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A 0.69 1.2 V trr Diode Reverse Recovery Time IF = 5.7A, di/dt = 100A/ µs 20 ns Qrr Diode Reverse Recovery Charge 5 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 145°C/W when mounted on a minimum pad of 2 oz copper. b. 52°C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied. |
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