©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDP75N08 Rev. A

June 2006

UniFET

TM

FDP75N08

75V N-Channel MOSFET

Features

• Low gate charge ( typical 150 nC)

• Low Crss ( typical 85 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

Absolute Maximum Ratings

Thermal Characteristics

TO-220

FDP Series

G

S

D

D

G

S

Symbol

Parameter

FDP75N08

Units

Drain-Source Voltage

75

V

Drain Current

75

A

47.7

A

Drain Current

- Pulsed

(Note 1)

300

A

Gate-Source Voltage

± 20

V

Single Pulsed Avalanche Energy

(Note 2)

1164

mJ

Avalanche Current

(Note 1)

75

A

Repetitive Avalanche Energy

(Note 1)

13.1

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

131

W

- Derate above 25°C

1

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

FDP75N08

Units

Thermal Resistance, Junction-to-Case

0.95

°C/W

Thermal Resistance, Case-to-Sink

0.5

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

°C/W