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FDS4953 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDS4953 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page May 2002 ©2002 Fairchild Semiconductor Corporation FDS4953 Rev D1(W) FDS4953 Dual 30V P-Channel PowerTrench® ® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • –5 A, –30 V RDS(ON) = 55 m Ω @ VGS = –10 V RDS(ON) = 95 m Ω @ VGS = –4.5 V • Low gate charge (6nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G D2 D2 D1 D1 S2 G2 S1 G1 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) –5 A – Pulsed –20 PD Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 PD (Note 1c) 0.9 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4953 FDS4953 13’’ 12mm 2500 units |
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Similar Description - FDS4953_02 |
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