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FDS6298 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDS6298 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  ©2007 Fairchild Semiconductor Corporation FDS6298 Rev. C1 ( W) FDS6298 30V N-Channel Fast Switching PowerTrench®®®® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications Control Switch for DC-DC Buck converters Notebook Vcore Telecom / Networking Point of Load Features 13 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V Low gate charge (10nC @ VGS=5V) Very low Miller Charge (3nC) Low Rg (1 Ohm) ROHS Compliant S D S S SO-8 D D D G D D D D S S S G Pin 1 SO-8 4 3 2 1 5 6 7 8 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Drain Current – Continuous (Note 1a) 13 ID – Pulsed 50 A Power Dissipation for Single Operation (Note 1a) 3.0 PD Power Dissipation for Single Operation (Note 1b) 1.2 W EAS Single Pulse Avalanche Energy (Note 3) 181 mJ TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6298 FDS6298 13’’ 12mm 2500 units tm April 2007 |
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