FDY300NZ_07 datasheet(1/6 Pages) FAIRCHILD

Part #	FDY300NZ

Description	Single N-Channel 2.5V Specified PowerTrench MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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January 2007

©

2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDY300NZ Rev B

FDY300NZ

Single N-Channel 2.5V Specified PowerTrench

®

® MOSFET

General Description

This Single N-Channel MOSFET has been designed

using

Fairchild

Semiconductor’s

advanced

Power

Trench process to optimize the RDS(ON) @ VGS = 2.5v.

Applications

•

Li-Ion Battery Pack

Features

•

600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V

RDS(ON) = 850 mΩ @ VGS = 2.5 V

•

ESD protection diode (note 3)

•

RoHS Compliant

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Unit

s

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±

12

V

ID

Drain Current

– Continuous

(Note 1a) 1a)

600

mA

– Pulsed

1000

PD

Power Dissipation (Steady State)

(Note 1a) 1a)

625

mW

(Note 1b) 1

446

TJ, TSTG

Operating and Storage Junction Temperature

Range

–55 to +150

°

C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 1a)

200

°

C/W

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1b) 1

280

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

C

FDY300NZ

7 ’’

8 mm

3000 units

1

2

3

G

D

S

1S

G

D

tm

January 2007

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FDY300NZ Datasheet(PDF) 1 Page - Fairchild Semiconductor

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