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PBYL2520CT Datasheet(PDF) 2 Page - NXP Semiconductors |
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PBYL2520CT Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page  Philips Semiconductors Product specification Rectifier diodes PBYL2525CT, PBYL2525CTB series Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction per diode - - 3 K/W to mounting base both diodes - - 2 K/W R th j-a Thermal resistance junction SOT78 package, in free air - 60 - K/W to ambient SOT404 package, pcb mounted, minimum - 50 - K/W footprint, FR4 board ELECTRICAL CHARACTERISTICS All characteristics are per diode at T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 12.5 A; Tj = 150˚C - 0.36 0.43 V I F = 12.5 A; Tj = 125˚C - 0.38 0.47 V I F = 25 A; Tj = 125˚C - 0.5 0.62 V I F = 25 A - 0.54 0.66 V I R Reverse current V R = VRWM -1 5 mA V R = VRWM; Tj = 100˚C - 20 30 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 600 - pF March 1998 2 Rev 1.000 |
Similar Part No. - PBYL2520CT |
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Similar Description - PBYL2520CT |
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