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PBYR1545CT Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBYR1545CT Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Rectifier diodes PBYR1545CT, PBYR1545CTB series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 40 V/ 45 V • Fast switching • Reverse surge capability I O(AV) = 15 A • High thermal cycling performance • Low thermal resistance V F ≤ 0.57 V GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1545CT series is supplied in the SOT78 conventional leaded package. The PBYR1545CTB series is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 1 3 anode 2 (a) tab cathode (k) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR15 40CT 45CT PBYR15 40CTB 45CTB V RRM Peak repetitive reverse - 40 45 V voltage V RWM Working peak reverse - 40 45 V voltage V R Continuous reverse voltage T mb ≤ 107 ˚C - 40 45 V I O(AV) Average rectified forward square wave; δ = 0.5; - 15 A current (both diodes T mb ≤ 128 ˚C conducting) I FRM Repetitive peak forward square wave; δ = 0.5; - 15 A current (per diode) T mb ≤ 128 ˚C I FSM Non-repetitive peak forward t = 10 ms - 135 A current per diode t = 8.3 ms - 150 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current per diode limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C 1. It is not possible to make connection to pin 2 of the SOT404 package. k a1 a2 13 2 13 tab 2 12 3 tab October 1998 1 Rev 1.300 |
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