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H11A617B Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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H11A617B Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 11 page  2 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.) Electrical Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics *Typical values at TA=25°C Symbol Parameter Device* Value Units TOTAL DEVICE TSTG Storage Temperature All -55 to +150 °C TOPR Operating Temperature All -55 to +100 °C TSOL Lead Solder Temperature All 260 for 10 sec °C PD Total Device Power Dissipation (-55°C to 50°C) All 200 mW EMITTER IF Continuous Forward Current 814 Series 617, 817 Series ±50 50 mA VR Reverse Voltage 617 Series 817 Series 6 6 V PD LED Power Dissipation (25°C ambient) No derating up to 100°C All 70 mW DETECTOR VCEO Collector-Emitter Voltage All 70 V VECO Emitter-Collector Voltage 814, 817 Series 617 Series 6 7 V IC Continuous Collector Current All 50 mA PD Detector Power Dissipation (25°C ambient) Derate above 90°C All 150 mW 2.9 mW/°C Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit EMITTER VF Input Forward Voltage IF = 60mA 617 Series 1.35 1.65 V IF = 20mA 817 Series 1.2 1.5 IF = ±20mA 814 Series 1.2 1.5 IR Reverse Leakage Current VR = 6.0V 617 Series .001 10 µA VR = 5.0V 817 Series DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 0.1 mA, IF = 0 ALL 70 100 V BVECO Emitter-Collector Breakdown Voltage IE = 10 µA, IF = 0 814, 817 Series 6 10 V 617 Series 7 10 ICEO Collector-Emitter Dark Current VCE = 10V, IF = 0 H11AA814/A, 817 Series, H11A617C/D 1 100 nA H11A617A/B 50 |
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